Comparison between CoSi2 and TiSi2 as dopant source for shallow silicided junction formation

Applied Surface Science

Volumn 38, Issue 1-4, 1989, Pages 430-440

  Van Den Hove, L ^a   Maex, K ^a   Hobbs, L ^a   Pippens, P ^a   De Keersmaecker, R ^a   Probst, V ^b   Schaber, H ^b  

^a IMEC   (Belgium)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS--ELECTRIC PROPERTIES; DIFFUSION; TITANIUM COMPOUNDS--ELECTRIC PROPERTIES;

COBALT SILICIDE; CURRENT-VOLTAGE CHARACTERISTICS; DOPANT DIFFUSION; SILICIDES; THERMAL STABILITY; TITANIUM SILICIDE;

SEMICONDUCTOR DEVICES, MOS;

EID: 0024734333     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(89)90564-3     Document Type: Article

References (13)

1. Development of the self-aligned titanium silicide process for VLSI applications
2. 2interconnection and contact technology for VLSI applications
3. 2 lines formed by metal-Si reaction
4. 2
5. Current understanding of the behavior of transition metal impurities in silicon
6. Limitations of TiSi2 as a source for dopant diffusion