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Journal of Applied Physics

Volumn 63, Issue 6, 1988, Pages 1990-1999

A study of the leakage mechanisms of silicided n+/p junctions

(3) Liu, R a Williams, D S a Lynch, W T a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000292241 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.341099 Document Type: Article

Times cited : (120)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.