A Silicidation-Induced Process Consideration for Forming Scale-Down Silicided Junction

IEEE Electron Device Letters

Volumn 15, Issue 9, 1994, Pages 342-344

  Cheng, H C ^a   Juang, M H ^a   Lin, C T ^a   Huang, L M ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL OPERATIONS; COBALT COMPOUNDS; DEPOSITION; DIFFUSION; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SUBSTRATES; THIN FILMS;

SCALE DOWN SILICIDED JUNCTION; SHALLOW JUNCTIONS; SILICIDATION INDUCED PROCESS;

SEMICONDUCTOR JUNCTIONS;

EID: 0028498190     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.311128     Document Type: Article

References (8)

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