Growth of AlN by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 370-376

  Fujito, Kenji ^a   Hashimoto, Tadao ^a   Samonji, Katsuya ^a   Speck, James S ^a   Nakamura, Shuji ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

A1. Dislocation; A3. Vapor phase epitaxy; B1. Nitrides

Indexed keywords

DISLOCATIONS (CRYSTALS); EXCIMER LASERS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR LASERS; VAPOR PHASE EPITAXY;

CHEMICAL VAPOR REACTION; ETCHED GROOVES; LASER-INDUCED BACKSIDE WET ETCHING TECHNIQUE; SAPPHIRE SUBSTRATES;

ALUMINUM NITRIDE;

EID: 9944259421     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.079     Document Type: Conference Paper

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