Enhanced etching of sapphire damaged by ion implantation

Journal of Physics D: Applied Physics

Volumn 31, Issue 14, 1998, Pages 1647-1651

  Dongzhu, Xie ^a   Dezhang, Zhu ^a   Haochang, Pan ^a   Hongjie, Xu ^a   Zongxin, Ren ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ION BEAMS; ION IMPLANTATION; IONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; YTTRIUM;

CHEMICAL ETCHING;

ETCHING;

EID: 0032117577     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/31/14/006     Document Type: Article

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