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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 76-80

Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance

Author keywords

A1. Growth models; A1. Optical microscopy; A1. Surface structure; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL MICROSCOPY; OPTIMIZATION; SILICON; SPECTROSCOPIC ANALYSIS; SUBSTRATES; SURFACE STRUCTURE;

EID: 9944234896     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.134     Document Type: Conference Paper
Times cited : (3)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.