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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 76-80
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Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance
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Author keywords
A1. Growth models; A1. Optical microscopy; A1. Surface structure; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials
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Indexed keywords
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
METALLORGANIC VAPOR PHASE EPITAXY;
OPTICAL MICROSCOPY;
OPTIMIZATION;
SILICON;
SPECTROSCOPIC ANALYSIS;
SUBSTRATES;
SURFACE STRUCTURE;
GROWTH RATES;
REAL-TIME MONITORING;
SAMPLE SURFACES;
SPECTROSCOPIC REFLECTANCE;
GALLIUM NITRIDE;
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EID: 9944234896
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.134 Document Type: Conference Paper |
Times cited : (3)
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References (11)
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