Photoluminescence and lasing characteristics of InGaAs/lnGaAsP/lnP quantum dots

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5766-5770

  Pyun, S H ^a   Lee, S H ^a   Lee, I C ^a   Kim, H D ^a   Jeong, Weon G ^a   Jang, J W ^b   Kim, N J ^c   Hwang, M S ^c   Lee, D ^c   Lee, J H ^d   Oh, D K ^d  

^a Sungkyunkwan University   (South Korea)

^b NanoEpi Technologies Corporation   (South Korea)

^c Chungnam National University   (South Korea)

^d Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; LIGHT AMPLIFIERS; PHOTODIODES; PHOTOLUMINESCENCE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

ADATOMS; ROOM TEMPERATURE; SEMICONDUCTOR ISLANDS; THERMAL ACTIVATION;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 9944229623     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1803941     Document Type: Article

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