Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ions

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 4960-4964

  Usov, I O ^a   Suvorova, A A ^b   Kudriavtsev, Y A ^c   Suvorov, A V ^d  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^c SEES   (Mexico)

^d Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FURNACE ANNEALING (FA); RAPID THERMAL ANNEALING (RTA); STRUCTURAL PROPERTIES; THIN EPITAXIAL FILM;

ANNEALING; BORON; CARRIER COMMUNICATION; DIFFUSION; EPITAXIAL GROWTH; HEAT TREATMENT; ION IMPLANTATION; MICROSTRUCTURE; PRECIPITATION (CHEMICAL); SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY; VECTORS;

SILICON CARBIDE;

EID: 9744278276     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1803923     Document Type: Article

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