Transmission electron microscopy investigation of defects in B-implanted 6H-SiC

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 413-416

  Persson, P O A ^a   Wahab, Q ^a,c   Hultman, L ^a   Nordell, N ^b   Schoner A ^b   Rottner, K ^b,c   Olsson, E ^d   Linnarsson, M K ^e  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ACREO AB   (Sweden)

^c ABB CORPORATE RESEARCH   (Sweden)

^d CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^e ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Boron Implantation; Boron Precipitates; Electron Microscopy; Elemental Mapping; Planar Defects

Indexed keywords

CRYSTAL DEFECTS; ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

ELEMENTAL MAPPING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031675516     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.413     Document Type: Article

References (5)

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5. N. Nordell, A. Schöner, K. Rottner, P.O.Å. Persson, Q. Wahab, L. Hultman, E. Olsson and M.K Linnarson, not published