Diffusion of boron in silicon carbide

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 734-737

  Ruschenschmidt K ^a   Bracht, H ^a   Laube, M ^b   Stolwijk, N A ^a   Pensl, G ^b  

^a UNIVERSITY OF MÜNSTER   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Boron diffusion; Kick out mechanism; Si self interstitial; Silicon carbide

Indexed keywords

BORON; CRYSTAL LATTICES; DIFFUSION; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY;

SUBLATTICES;

SILICON CARBIDE;

EID: 0035675060     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00889-4     Document Type: Article

References (7)