Changes in electrical and optical properties of p-AlGaN due to proton implantation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 5, 2004, Pages 2291-2294

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Baik, K H ^b   Pearton, S J ^b   Zavada, J M ^c  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLE FRACTION; PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY (PICTS); PROTON IMPLANTATION; SCHOTTKY DIODES;

ACTIVATION ENERGY; ALUMINUM COMPOUNDS; CARRIER CONCENTRATION; CATHODOLUMINESCENCE; HOLE TRAPS; ION IMPLANTATION; LIGHT TRANSMISSION; LIGHTING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTODETECTORS; SCANNING ELECTRON MICROSCOPY;

PROTONS;

EID: 9744258058     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1781187     Document Type: Article

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