A comparison of commercial sources of epitaxial material for GaN HFETs fabrication

Journal of Crystal Growth

Volumn 230, Issue 3-4, 2001, Pages 569-572

  Wallis, R H ^a   Davies, R A ^a   Jones, S K ^a   Beanland, R ^a   Phillips, W A ^a  

^a Marconi Caswell Ltd   (United Kingdom)

Author keywords

A3. Epitaxy; B1. Gallium compounds; B1. Nitrides; B3. Heterostructure field effect transistors

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; HALL EFFECT; HETEROJUNCTIONS; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; PINCH-OFF VOLTAGES;

FIELD EFFECT TRANSISTORS;

EID: 0035451694     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01289-1     Document Type: Article

References (1)