Study of the evolution of nanoscale roughness from the line edge of exposed resist to the sidewall of deep-etched InP/InGaAsP heterostructures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 5, 2004, Pages 2538-2541

  Jang, J H ^a,c   Zhao, W ^a   Bae, J W ^a   Adesida, I ^a   Lepore, A ^b   Kwakernaak, M ^b   Abeles, J H ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b SARNOFF CORPORATION   (United States)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

INGAASP; INP; LINE EDGE ROUGHNESS (LER); NANOSCALE ROUGHNESS;

ATOMIC FORCE MICROSCOPY; ELECTRON BEAMS; ETCHING; FABRICATION; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; WAVEGUIDES;

INDIUM COMPOUNDS;

EID: 9744227214     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1800331     Document Type: Article

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