Behaviors of AlxGa1-xN (0.5 ≤ x ≤ 1.0)/GaN short period strained-layer superlattices on the threading dislocation density reduction in GaN films

Journal of Crystal Growth

Volumn 260, Issue 1-2, 2004, Pages 73-78

  Gong, J R ^a   Huang, C W ^a   Tseng, S F ^a   Lin, T Y ^b   Lin, K M ^a   Liao, W T ^a   Tsai, Y L ^a   Shi, B H ^a   Wang, C L ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

A1. Characterization; A1. Line defects; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

ALUMINUM COMPOUNDS; ETCHING; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

ETCHING PIT DENSITY (EPD);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0242496476     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.08.030     Document Type: Article

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