Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 243-247

  Barquinha, P ^a   Pereira, L ^a   Aguas H ^a   Fortunato, E ^a   Martins, R ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

Gate dielectrics; Sputtering; Titanium oxide

Indexed keywords

AMORPHOUS FILMS; DIELECTRIC MATERIALS; ELECTRON BEAMS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MOS DEVICES; POLYCRYSTALLINE MATERIALS; TITANIUM OXIDES;

CHARGE DENSITY; ELECTRON-BEAM EVAPORATION; GATE DIELECTRICS;

THIN FILMS;

EID: 9544232544     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.116     Document Type: Conference Paper

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