Polymorphous silicon deposited in large area reactor at 13 and 27 MHz

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 6-10

  Aguas H ^a   Roca i Cabarrocas, P ^b   Lebib, S ^b   Silva, V ^a   Fortunato, E ^a   Martins, R ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

Amorphous silicon; Plasma diagnostics; Polymorphous; Semiconductors

Indexed keywords

ELECTRIC CONDUCTIVITY; ELLIPSOMETRY; INFRARED SPECTROSCOPY; PLASMA DIAGNOSTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; THIN FILMS; TRANSPORT PROPERTIES;

EXCITATION FREQUENCY;

AMORPHOUS SILICON;

EID: 0037416699     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01172-0     Document Type: Conference Paper

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