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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 9 AB, 2004, Pages

Effects of HfOxNy gate-dielectric nitrogen concentration on the charge trapping properties of metal-oxide-semiconductor devices

(4) Cheng, Chin Lung a Chang Liao, Kuei Shu a Huang, Ching Hung a Wang, Tien Ko a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

Charge trapping; Hafnium oxynitride; Metal oxide semiconductor (MOS); Nitrogen concentration; Stress induced leakage current (SILC)

Indexed keywords

CAPACITORS; CRYSTAL DEFECTS; DIELECTRIC DEVICES; ELECTRIC POTENTIAL; ELECTRON TRAPS; LEAKAGE CURRENTS; NITROGEN; RAPID THERMAL ANNEALING; STRAIN RATE;

CHARGE TRAPPING; HAFNIUM OXYNITRIDE; NITROGEN CONCENTRATION; STRESS-INDUCED LEAKAGE CURRENT (SILC);

MOS DEVICES;

EID: 9144274053 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.L1181 Document Type: Article

Times cited : (2)

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