Effects of nitridation by nitric oxide on the leakage current of thin SiO2 gate oxides

Journal of Applied Physics

Volumn 87, Issue 1, 2000, Pages 498-501

  Gerardi, C ^a   Melanotte, M ^a   Lombardo, S ^b   Alessandri, M ^a   Crivelli, B ^a   Zonca, R ^a  

^a STMICROELECTRONICS   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000494270     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371916     Document Type: Article

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