Transition in growth mode by competing strain relaxation mechanisms: Surfactant mediated epitaxy of SiGe alloys on Si

Applied Physics Letters

Volumn 85, Issue 15, 2004, Pages 3056-3058

  Kammler, M ^a   Horn Von Hoegen, M ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEPOSITION; LOW ENERGY ELECTRON DIFFRACTION; MONTE CARLO METHODS; OSCILLATIONS; SEMICONDUCTOR MATERIALS; SURFACE ACTIVE AGENTS; ULTRAHIGH VACUUM;

DRIFT MOBILITY; FILM COMPOSITION; LATTICE MISMATCHES; STRAIN RELAXATION;

SILICON ALLOYS;

EID: 8644274106     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1803914     Document Type: Article

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