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Volumn 351, Issue 1-3, 1996, Pages
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Structure of the Stranski-Krastanov layer in surfactant-mediated Sb/Ge/Si(111) epitaxy
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Author keywords
Antimony; Epitaxy; Germanium; Scanning tunneling microscopy; Silicon; Surface relaxation and reconstruction; Surface stress; Surface structure; Surface thermodynamics
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Indexed keywords
CRYSTAL SYMMETRY;
EPITAXIAL GROWTH;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING ANTIMONY;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTING SILICON;
SEMICONDUCTOR GROWTH;
STACKING FAULTS;
SURFACE ACTIVE AGENTS;
SURFACE STRUCTURE;
THERMAL EFFECTS;
THERMODYNAMICS;
ISLANDING;
STRANSKI KRASTANOV LAYER;
SURFACE RECONSTRUCTION;
SURFACE RELAXATION;
SEMICONDUCTING FILMS;
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EID: 0030148475
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/0039-6028(95)01098-X Document Type: Article |
Times cited : (23)
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References (23)
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