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Volumn 351, Issue 1-3, 1996, Pages

Structure of the Stranski-Krastanov layer in surfactant-mediated Sb/Ge/Si(111) epitaxy

Author keywords

Antimony; Epitaxy; Germanium; Scanning tunneling microscopy; Silicon; Surface relaxation and reconstruction; Surface stress; Surface structure; Surface thermodynamics

Indexed keywords

CRYSTAL SYMMETRY; EPITAXIAL GROWTH; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; STACKING FAULTS; SURFACE ACTIVE AGENTS; SURFACE STRUCTURE; THERMAL EFFECTS; THERMODYNAMICS;

EID: 0030148475     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01098-X     Document Type: Article
Times cited : (23)

References (23)
  • 14
    • 30244502234 scopus 로고    scopus 로고
    • This (6√3 × 6√3)R30° structure was also observed by low energy electron diffraction (LEED); B. Voigtländer, unpublished
    • This (6√3 × 6√3)R30° structure was also observed by low energy electron diffraction (LEED); B. Voigtländer, unpublished.
  • 21
    • 30244495500 scopus 로고
    • Eds. J.F. van der Veen and M.A. Van Hove Springer, New York
    • D. Vanderbilt, in: The Structure of Surfaces II, Eds. J.F. van der Veen and M.A. Van Hove (Springer, New York, 1988) p. 276.
    • (1988) The Structure of Surfaces II , pp. 276
    • Vanderbilt, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.