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Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 865-868

Effects of thermal treatments on the structural and electrical properties of Ni/Ti bilayers Schottky contacts on 6H-SiC

(6) Roccaforte, F a La Via, F a Baeri, A a Raineri, V a Calcagno, L b Mangano, F b

a CNR (Italy)

b UNIVERSITY OF CATANIA (Italy)

Author keywords

Ni Ti bilayers; Schottky diodes; Silicides

Indexed keywords

ANNEALING; ELECTRON BEAMS; EPITAXIAL GROWTH; EVAPORATION; METALLIZING; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM; X RAY DIFFRACTION;

NI/TI BILAYERS; RECTIFYING CONTACTS; SCHOTTKY DIODES; SILICIDATION;

NICKEL;

EID: 8644271687 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.457-460.865 Document Type: Conference Paper

Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.