Progress in laser annealing for low-temperature semiconductor processing and its application to advanced electronics and display devices

ICALEO 2002 - 21st International Congress on Applications of Laser and Electro-Optics, Congress Proceedings

Volumn , Issue , 2002, Pages

  Sameshima, T ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DISPLAY DEVICES; GRAIN BOUNDARIES; METALLIC FILMS; POLYCRYSTALLINE MATERIALS; PROCESSING; SEMICONDUCTOR LASERS; TEMPERATURE; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE;

HIGH CARRIER MOBILITY; LASER CRYSTALLIZATION; LOW PROCESSING TEMPERATURE; PULSED LASER CRYSTALLIZATION; RAPID CRYSTALLIZATION; SEMICONDUCTOR PROCESSING; SILICON THIN FILM TRANSISTORS; STRUCTURAL AND ELECTRICAL PROPERTIES;

PULSED LASERS;

EID: 85087577059     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.2351/1.5066206     Document Type: Conference Paper

References (32)

1. E. I. Shtyrkov, I. B. Khaibullin, M. M. Zaripov, M. F. Galyaludinov and R. M. Bayasilov, Sov. Phvs. -Semieond. (enbl. Transl.) 9 (1975) 1309.
2. R. F. Wood and C. E. Giles, Rhys. Rev. B23 (1981) 2923.
3. D. H. Lowndes, G. H. kirkpatrick, Jr, S. J. Pennvcook. S., P. Withrow and D. N. Mashburn, Appl. Phys. Lett., 48 (1986) 1389.
4. T. F. eutsch, J. C. C. Fan, C. W. Turner, R. L. Chapman, D. J. Ehrlich and R. M. Osgood, Jr., Appl. Phys. Lett., 38 (1981) 144.
5. R. S. Sussmann, A. J. Harris and R. Ogden, J. Noncrystalline. Solid, 35&36 (1980) 249.
6. T. Sameshima and S. Usui, Mat. Res. Soc. Symp. Proc., 71 (1986) 435.
7. T. Sameshima, S. Usui and M. Sekiya, IEEE Electron Device Letters, EDL-7 (1986) 276.
8. K. Sera. F. Okumura. H. Uchida. S, Itoh, S. Kaneko, and K. Hotta, IEEE Trans. Electron. Devices, 36(1989) 2868.
9. H.Kuriyama, T.Kuwahara, S.Ishida, T.Nohda, K.Sano, H.lwata, S. Noguchi, S.Kiyama, S.Tsuda, S.Nakano, M.Osumi and Y.Kuwano, Jpn. J.Appl. Phys. 31 (1992) 4550.
10. E.L. Mathé, J.G.Maillou, A.Naudon, E.Fogarassy, M.lliq and S.De Unamuro. Appl. Surface Science 43 (1989) 142.
11. S. Uchikoga and N. Ibataki, Thin Solid films, 383 (2001) 19.
12. N.Bloembergen. H. Kurz, .J. M. Liu and R. Yen. Easer and electron-beam interactions with solids, eds. B. R. Applton and G. K. Celler, (1982) 3.
13. Lanbolt-Boemstein, eds. O. Madelung. M. Schultz and H.Weiss (Springer-Verlag, Berlin, (1984) Vol. 17-c, Chap 6.
14. T. Sameshima. M. Hara and S.Usui, Jpn. J. Appl. Phys. Lett., 28 (1989) 2131.
15. G. J. Galvin, M. O. Thompson, J. W. Mayer, R. B. Hammond, N. Paulter and P.S. Pcercy, Phys. Pev. Lett., 48 (1982) 33.
16. T. Sameshima, M.Hara and S.Usui, Jpn. J. Appl. Phys., 28 (1989) 1789.
17. T. Sameshima and S. Usui, Appl. Phys. Lett., 59 (1991) 2724.
18. S. Higashi and T.Sameshima, Jpn.J.,Appl.Phys 40(2001)480.
19. S.R.Sliffler. MO.Thompson, and P.S.Peerey, Phys. Rev. Lett. 60 (1988) 2519.
20. S.Higashi, N.Andoh. K.Kamisako and T.Samesliima, Jpn.J. Appl. Phys 40 (2001) 731.
21. K. Kilahara. A. Morilani. A. Hara and M. Okabu, Jpn.J.Appl.Phys Jpn.J.Appl.Phys 38, (1999) L1312.
22. T.Mizimo, S.Takagi, N.Sugiyania, H.Satake, k.kurobe and A.Toriumi, IEEE Election Device Lett. 21 (2000) 230.
23. H. Engstrom, J. Appl. Phys. 51 (1980) 5245.
24. T. Sameshima, K. Saitoh, N. Aovatna, S. Higashi, M. Kondo and A. Matsnda, Jpn. J.Appl. Phys., 38. 1892 (1999).
25. K. Asada, K. Sakamoto, T. Watanabe, T. Saneslima and S. Higashi, Jpn. J.Appl. Plus, 39(2000)3883.
26. Y.Tsunoda, T. Sameshima and S. Higashi, Jpn. J.Appl. Phys., 39. 1656 (2000).
27. H.Waiakabe and T.Sameshima, Proc. of Workshop on Active Matrix Liquid Crystal Displays (Tokyo Japan, 2001) 45.
28. H.Kuriyama, T.Nohda, Y.Aya, T.Kuwahara, K.Wakisaka. S.Kivama and S.Tsuda, Jpn. J.Appl. Phys. 33 (1992) 5657.
29. J.S.Im and H.J.kim. Appl. Phys. Lett., 63 (1993) 1969.
30. R.Ishihara and M.Matsumura, Electron Lett. 30 (1995) 1956.
31. M.Jumonji. Jpn. J. Appl. Phys., 35 (1996) 6592.
32. Chang-Ho Oh, M. Ozawa and M. Malsumura. Jpn. J. Appl. Phys, 37, (1998). L492