Anomalous Conductivity Tailored by Domain-Boundary Transport in Crystalline Bismuth Vanadate Photoanodes

Chemistry of Materials

Volumn 30, Issue 5, 2018, Pages 1677-1685

  Zhang, Wenrui ^a   Yan, Danhua ^a,b   Li, Jun ^c   Wu, Qiyuan ^b   Cen, Jiajie ^b   Zhang, Lihua ^a   Orlov, Alexander ^b   Xin, Huolin ^a   Tao, Jing ^c   Liu, Mingzhao ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b Stony Brook University   (United States)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; BISMUTH COMPOUNDS; CARRIER TRANSPORT; DEPOSITION; ELECTRON TRANSPORT PROPERTIES; PULSED LASER DEPOSITION; SEMICONDUCTOR INSULATOR BOUNDARIES;

ANOMALOUS CONDUCTIVITY; ELECTRON TRANSPORT; HIGH ELECTRICAL CONDUCTIVITY; INTRINSIC CONDUCTIVITY; MATERIAL CHARACTERISTICS; PHOTO-ELECTROCHEMISTRY; STRUCTURAL IMPERFECTIONS; TRANSPORT DISTANCES;

VANADIUM COMPOUNDS;

EID: 85043708744     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/acs.chemmater.7b05093     Document Type: Article

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