Domain-wall conduction in ferroelectric BiFeO 3 controlled by accumulation of charged defects

Nature Materials

Volumn 16, Issue 3, 2017, Pages 322-327

  Rojac, Tadej ^a   Bencan, Andreja ^a   Drazic, Goran ^b   Sakamoto, Naonori ^c   Ursic, Hana ^a   Jancar, Bostjan ^a   Tavcar, Gasper ^a   Makarovic, Maja ^a   Walker, Julian ^a   Malic, Barbara ^a   Damjanovic, Dragan ^d  

^a JO EF STEFAN INSTITUTE   (Slovenia)

^b NATIONAL INSTITUTE OF CHEMISTRY   (Slovenia)

^c SHIZUOKA UNIVERSITY   (Japan)

^d EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; CHEMICAL ANALYSIS; DEFECTS; FERROELECTRIC MATERIALS; FERROELECTRICITY;

CHARGED DEFECTS; DOMAIN WALL CONDUCTIVITIES; ELECTRICAL CONDUCTIVITY; ELECTRON HOLE; HIGH-TEMPERATURE ANNEALING; HOPPING CONDUCTION; POLARIZATION CHARGES; WALL CONDUCTION;

DOMAIN WALLS;

EID: 84995527950     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat4799     Document Type: Article

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