Adsorption-controlled growth of BiVO4 by molecular-beam epitaxy

APL Materials

Volumn 1, Issue 4, 2013, Pages

  Stoughton, S ^a   Showak, M ^a   Mao, Q ^a   Koirala, P ^b   Hillsberry, D A ^c   Sallis, S ^d   Kourkoutis, L F ^a   Nguyen, K ^e   Piper, L F J ^d,f   Tenne, D A ^c   Podraza, N J ^b   Muller, D A ^a   Adamo, C ^a   Schlom, D G ^a  

^a Cornell University   (United States)

^b UNIVERSITY OF TOLEDO   (United States)

^c BOISE STATE UNIVERSITY   (United States)

^d State University of New York at Binghamton   (United States)

^e Department of Obstetrics Gynecology   (United States)

^f BINGHAMTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84896950113     PISSN: None     EISSN: 2166532X     Source Type: Journal    
DOI: 10.1063/1.4824041     Document Type: Article

References (36)

1. O. Khaselev and J. Turner, Science 280, 425 (1998). 10.1126/science.280. 5362.425
2. T. Bak, J. Nowotny, M. Rekas, and C. C. Sorrell, Int. J. Hydrogen Energy 27, 991 (2002). 10.1016/S0360-3199(02)00022-8
3. K. Sayama, A. Nomura, T. Arai, T. Sugita, R. Abe, M. Yanagida, T. Oi, Y. Iwasaki, Y. Abe, and H. Sugihara, J. Phys. Chem. B 110, 11352 (2006). 10.1021/jp057539+
4. A. Kudo, K. Omori, and H. Kato, J. Am. Chem. Soc. 121, 11459 (1999). 10.1021/ja992541y
5. S. Tokunaga, H. Kato, and A. Kudo, Chem. Mater. 13, 4624 (2001). 10.1021/cm0103390
6. M. W. Stoltzfus, P. M. Woodward, R. Seshadri, J.-H. Klepeis, and B. Bursten, Inorg. Chem. 46, 3839 (2007). 10.1021/ic061157g
7. H. M. Zhang, J. B. Liu, H. Wang, W. X. Zhang, and H. Yan, J. Nanopart. Res. 10, 767 (2008). 10.1007/s11051-007-9310-y
8. H. Luo, A. Mueller, T. McCleskey, A. Burrell, E. Bauer, and Q. Jia, J. Phys. Chem. C 112, 6099 (2008). 10.1021/jp7113187
9. A. Walsh, Y. Yan, M. N. Huda, M. M. Al-Jassim, and S.-H. Wei, Chem. Mater. 21, 547 (2009). 10.1021/cm802894z
10. D. J. Payne, M. D. M. Robinson, R. G. Egdell, A. Walsh, J. McNulty, K. E. Smith, and L. F. J. Piper, Appl. Phys. Lett. 98, 212110 (2011). 10.1063/1.3593012
11. Y. Hu, D. Li, Y. Zheng, W. Chen, Y. He, Y. Shao, X. Fu, and G. Xiao, Appl. Catal., B 104, 30 (2011). 10.1016/j.apcatb.2011.02.031
12. W. J. Jo, J.-W. Jang, K.-J. Kong, H. J. Kang, J. Y. Kim, H. Jun, K. P. S. Parmar, and J. S. Lee, Angew. Chem., Int. Ed. 51, 3147 (2012). 10.1002/anie.201108276
13. J. A. Seabold and K.-S. Choi, J. Am. Chem. Soc. 134, 2186 (2012). 10.1021/ja209001d
14. J. D. Bierlein and A. W. Sleight, Solid State Commun. 16, 69 (1975). 10.1016/0038-1098(75)90791-7
15. M. Zhou, S. Zhang, Y. Sun, C. Wu, M. Wang, and Y. Xie, Chem. Asian J. 5, 2515 (2010). 10.1002/asia.201000452
16. M. Zhou, J. Bao, W. Bi, Y. Zeng, R. Zhu, M. Tao, and Y. Xie, ChemSusChem 5, 1420 (2012). 10.1002/cssc.201200287
17. Q. Jia, K. Iwashina, and A. Kudo, Proc. Natl. Acad. Sci. U.S.A. 109, 11564 (2012). 10.1073/pnas.1204623109
18. A. W. Sleight, H. Y. Chen, A. Ferretti, and D. E. Cox, Mater. Res. Bull. 14, 1571 (1979). 10.1016/0025-5408(72)90227-9
19. Z. Zhao, Z. Li, and Z. Zou, Phys. Chem. Chem. Phys. 13, 4746 (2011). 10.1039/c0cp01871f
20. S. Migita, Y. Kasai, H. Ota, and S. Sakai, Appl. Phys. Lett. 71, 3712 (1997). 10.1063/1.120490
21. C. D. Theis, J. Yeh, D. G. Schlom, M. E. Hawley, G. W. Brown, J. C. Jiang, and X. Q. Pan, Appl. Phys. Lett. 72, 2817 (1998). 10.1063/1.121468
22. J. F. Ihlefeld, A. Kumar, V. Gopalan, D. G. Schlom, Y. B. Chen, X. Q. Pan, T. Heeg, J. Schubert, X. Ke, P. Schiffer, J. Orenstein, L. W. Martin, Y. H. Chu, and R. Ramesh, Appl. Phys. Lett. 91, 071922 (2007). 10.1063/1.2767771
23. See supplementary material at http://dx.doi.org/10.1063/1.4824041 E-AMPADS-1-012304 for depictions of the crystal structure of the film and substrate, air SEM analysis from which fractional coverage was estimated, and x-ray spectroscopy results confirming bonding states of film atoms.
24. 3 reported by M. Yashima, S. Sasaki, M. Kakihana, Y. Yamaguchi, H. Arashi, and M. Yoshimura, Acta Crystallogr., Sect. B 50, 663 (1994). 10.1107/S0108768194006257
25. Calculated by interpolating the thermal expansion data for YSZ reported by J. W. Adams, H. H. Nakamura, R. P. Ingel, and R. W. Rice, J. Am. Ceram. Soc. 68, C-228 (1985). 10.1111/j.1151-2916.1985.tb15793.x
26. R. L. Frost, D. A. Henry, M. L. Weier, and W. Martens, J. Raman Spectrosc. 37, 722-732 (2006). 10.1002/jrs.1499
27. M. Gotic, S. Music, M. Ivanda, M. Soufek, and S. Popovic, J. Mol. Struct. 744-747, 535 (2005). 10.1016/j.molstruc.2004.10.075
28. J. Cai, C. Raptis, Y. S. Raptis, and E. Anastassakis, Phys. Rev. B 51, 201 (1995). 10.1103/PhysRevB.51.201
29. J. Lee, P. I. Rovira, I. An, and R. W. Collins, Rev. Sci. Instrum. 69, 1800 (1998). 10.1063/1.1148844
30. B. Johs, J. A. Woollam, C. M. Herzinger, J. Hilfiker, R. Synowicki, and C. L. Bungay, in Critical Reviews of Optical Science and Technology, Optical Metrology, edited by G. A. Al-Jumaily (SPIE Publishing, Bellingham, WA, 1999), Vol. CR72, pp. 29-58.
31. Y. Cong, I. An, K. Vedam, and R. W. Collins, Appl. Opt. 30, 2692 (1991). 10.1364/AO.30.002692
32. H. Fujiwara, J. Koh, P. I. Rovira, and R. W. Collins, Phys. Rev. B 61, 10832 (2000). 10.1103/PhysRevB.61.10832
33. R. W. Collins and A. S. Ferlauto, in Handbook of Ellipsometry, edited by H. G. Tompkins and E. A. Irene (William Andrew, Norwich, NY, 2005), pp. 125-129.
34. D. E. Aspnes, in Handbook on Semiconductors, edited by M. Balkanski (North Holland, Amsterdam NL, 1980), Vol. 2, pp. 125-127.
35. J. I. Pankov, Optical Processes in Semiconductors (Dover, New York, 1975), p. 37.
36. L. F. Kourkoutis, Y. Hotta, T. Susaki, H. Y. Hwang, and D. A. Muller, Phys. Rev. Lett. 97, 256803 (2006). 10.1103/PhysRevLett.97.256803