Combined charge carrier transport and photoelectrochemical characterization of BiVO4 single crystals: Intrinsic behavior of a complex metal oxide

Journal of the American Chemical Society

Volumn 135, Issue 30, 2013, Pages 11389-11396

  Rettie, Alexander J E ^a   Lee, Heung Chan ^b   Marshall, Luke G ^a   Lin, Jung Fu ^b   Capan, Cigdem ^c   Lindemuth, Jeffrey ^d   McCloy, John S ^e   Zhou, Jianshi ^a   Bard, Allen J ^b   Mullins, C Buddie ^a,b  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c WASHINGTON STATE UNIVERSITY   (United States)

^d Lake Shore Cryotronics   (United States)

^e PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLOATING ZONE TECHNIQUE; HOLE DIFFUSION LENGTH; MOTT-SCHOTTKY ANALYSIS; PHOTOELECTROCHEMICAL CHARACTERIZATION; PHOTOELECTROCHEMICALS; PHOTON CONVERSION EFFICIENCIES; SMALL POLARON HOPPING CONDUCTIONS; VARIABLE-RANGE HOPPING;

CARRIER TRANSPORT; ELECTRIC PROPERTIES; HALL EFFECT;

SINGLE CRYSTALS;

BISMUTH; BISMUTH VANADATE; METAL OXIDE; MOLYBDENUM; TUNGSTEN; UNCLASSIFIED DRUG; VANADIC ACID;

ARTICLE; ELECTROCHEMICAL DETECTION; PHOTOELECTROCHEMICAL PROPERTY; RAMAN SPECTROMETRY;

EID: 84881052314     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja405550k     Document Type: Article

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