Semiconductor-Based Photoelectrochemical Water Splitting at the Limit of Very Wide Depletion Region

Advanced Functional Materials

Volumn 26, Issue 2, 2016, Pages 219-225

  Liu, Mingzhao ^a   Lyons, John L ^a   Yan, Danhua ^a   Hybertsen, Mark S ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

graded doping; indirect band gap semiconductors; photoelectrochemical water splitting; strontium titanate

Indexed keywords

ECONOMIC AND SOCIAL EFFECTS; EFFICIENCY; ELECTROCHEMISTRY; ELECTROMAGNETIC WAVE ABSORPTION; ENERGY GAP; LIGHT ABSORPTION; OXYGEN VACANCIES; PHOTOELECTROCHEMICAL CELLS; SEMICONDUCTOR DOPING; STRONTIUM ALLOYS; STRONTIUM TITANATES; TEMPERATURE;

GRADED DOPING PROFILES; HIGH QUANTUM EFFICIENCY; INDIRECT BAND GAP; INDIRECT TRANSITION; PHOTOELECTROCHEMICAL WATER SPLITTING; PHOTOELECTROCHEMICALS; SCHOTTKY JUNCTIONS; SIMULTANEOUS OPTIMIZATION;

WATER ABSORPTION;

EID: 84954066525     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201503692     Document Type: Article

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