Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots

Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 15, 2002, Pages 1-4

  Liao, X Z ^a,b   Zou, J ^a   Cockayne, D J H ^c   Wan, J ^d   Jiang, Z M ^d,e   Jin, G ^d   Wang, Kang L ^d  

^a UNIVERSITY OF SYDNEY   (Australia)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF OXFORD   (United Kingdom)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85038324556     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.65.153306     Document Type: Article

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