Ultrahigh-gain single SnO2 microrod photoconductor on flexible substrate with fast recovery speed

Advanced Functional Materials

Volumn 25, Issue 21, 2015, Pages 3157-3163

  Liu, Kewei ^a   Sakurai, Makoto ^b   Aono, Masakazu ^b   Shen, Dezhen ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

flexibility; gain; SnO2; ultraviolet photodetectors

Indexed keywords

ENERGY GAP; PHOTOCONDUCTIVITY; PHOTODETECTORS; PHOTONS;

CONTRADICTORY PROBLEMS; FLEXIBILITY; GAIN; PERSISTENT PHOTOCONDUCTIVITY; PHOTOCONDUCTIVE GAINS; PHOTODETECTING DEVICES; ULTRA-VIOLET PHOTODETECTORS; WIDE-BAND-GAP SEMICONDUCTOR;

RECOVERY;

EID: 85027949675     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201500231     Document Type: Article

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