High-throughput fabrication of photoconductors with high detectivity, photosensitivity, and bandwidth

ACS Nano

Volumn 6, Issue 6, 2012, Pages 5627-5634

  Xing, Wendong ^a   Kung, Sheng Chin ^a   Van Der Veer, Wytze E ^a   Yan, Wenbo ^a   Ayvazian, Talin ^a   Kim, Jung Yun ^a   Penner, Reginald M ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California at Irvine   (United States)

Author keywords

cadmium selenide; electrodeposition; electromigration; nanogap; photodetector

Indexed keywords

3 DB BANDWIDTH; BAND EDGE TRANSITION; CADMIUM SELENIDES; DETECTIVITY; GAP FORMATION; HIGH-THROUGHPUT; MEAN GRAIN DIAMETER; METAL SEMICONDUCTOR METAL; NANO-GAP; NANOCRYSTALLINES; NANOGAPS; NANOJUNCTIONS; PHOTOCONDUCTIVE GAINS; RECOVERY TIME; SINGLE CUBIC PHASE; SPECTRAL PHOTOCONDUCTIVITY; SUB-50 NM;

CADMIUM COMPOUNDS; ELECTRODEPOSITION; ELECTROMIGRATION; GOLD; LIGHT SENSITIVE MATERIALS; PHOTOCONDUCTIVITY; PHOTODETECTORS; PHOTOSENSITIVITY;

CADMIUM ALLOYS;

NANOPARTICLE;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; LIGHT; MATERIALS TESTING; METHODOLOGY; PHOTOMETRY; RADIATION DOSE; RADIATION EXPOSURE; SEMICONDUCTOR;

ELECTRIC CONDUCTIVITY; LIGHT; MATERIALS TESTING; NANOPARTICLES; PHOTOMETRY; RADIATION DOSAGE; SEMICONDUCTORS;

EID: 84862885101     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn301567c     Document Type: Article

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