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Volumn 9, Issue 10, 2009, Pages 3453-3459

Giant persistent photoconductivity in rough silicon nanomembranes

Author keywords

[No Author keywords available]

Indexed keywords

GATE VOLTAGES; NANOMEMBRANES; ORDERS OF MAGNITUDE; P-TYPE SI; PERSISTENT PHOTOCONDUCTIVITY; PERSISTENT PHOTOCURRENTS; ROUGH SURFACES;

EID: 72849152988     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl9016557     Document Type: Article
Times cited : (60)

References (54)
  • 33
    • 72849142716 scopus 로고    scopus 로고
    • After removing the native oxide, the wafer is immersed immediately into the preheated KOH etching solution. The surface of the wafer is white at first; during the etching, the color of the Cr-mask-covered area is still white, while the color of the rest area changes gradually into black, and just when it changes into black, the wafer is taken out. Over-etching damages the Si nanomembranes. The etching time varies with the concentration and temperature of the etching solution. We find out that for 20 wt % KOH aqueous solution at 50 °C, the etching time is about 35 s
    • After removing the native oxide, the wafer is immersed immediately into the preheated KOH etching solution. The surface of the wafer is white at first; during the etching, the color of the Cr-mask-covered area is still white, while the color of the rest area changes gradually into black, and just when it changes into black, the wafer is taken out. Over-etching damages the Si nanomembranes. The etching time varies with the concentration and temperature of the etching solution. We find out that for 20 wt % KOH aqueous solution at 50 °C, the etching time is about 35 s.
  • 34
    • 72849130962 scopus 로고    scopus 로고
    • 2 masks were removed by rinsing in 5 wt % HF aqueous solution
    • 2 masks were removed by rinsing in 5 wt % HF aqueous solution.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.