Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms

ACS Applied Materials and Interfaces

Volumn 9, Issue 19, 2017, Pages 16138-16147

  Cheng, Qian ^a   Benipal, Manpuneet K ^a   Liu, Qianlang ^a   Wang, Xingye ^a   Crozier, Peter A ^a   Chan, Candace K ^a   Nemanich, Robert J ^b  

^a Arizona State University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

atomic layer deposition; interface electronic structure; photoanode; photocorrosion; photodegradation; wide band gap protective layer; zinc oxide

Indexed keywords

ALUMINUM; ALUMINUM COATINGS; ATOMS; CARRIER MOBILITY; CHRONOAMPEROMETRY; DEGRADATION; DEPOSITION; ELECTROLYTES; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PHOTODEGRADATION; PHOTOELECTROCHEMICAL CELLS; PHOTOELECTRON SPECTROSCOPY; REDOX REACTIONS; SCANNING ELECTRON MICROSCOPY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; WIDE BAND GAP SEMICONDUCTORS; ZINC; ZINC OXIDE;

INTERFACE ELECTRONIC STRUCTURE; LINEAR SWEEP VOLTAMMETRY; PHOTO-ANODES; PHOTOCATALYST MATERIALS; PHOTOCORROSION; PROTECTION CAPABILITIES; PROTECTIVE LAYERS; SEMICONDUCTOR/ELECTROLYTE INTERFACES;

ATOMIC LAYER DEPOSITION;

EID: 85019607803     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.7b01274     Document Type: Article

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