Wide band gap characteristic of quaternary and flexible Mg and Ga co-doped ZnO transparent conductive thin films

Journal of Asian Ceramic Societies

Volumn 1, Issue 3, 2013, Pages 262-266

  Shin, Seung Wook ^a   Kim, In Young ^b   Jeon, Ki Seok ^b   Heo, Jae Yeong ^b   Heo, Gi Seok ^c   Patil, P S ^b,d   Kim, Jin Hyeok ^b   Lee, Jeong Yong ^a,e  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Chonnam National University   (South Korea)

^c Solar City Center   (South Korea)

^d SHIVAJI UNIVERSITY   (India)

^e Institute for Basic Science   (South Korea)

Author keywords

Flexible thin film; Mg and Ga co doped ZnO (MGZO); RF magnetron sputtering; Transparent conducting oxide (TCO)

Indexed keywords

CONDUCTIVE FILMS; ENERGY GAP; ETHYLENE; FILM PREPARATION; GALLIUM; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; MAGNESIA; MAGNESIUM; MAGNETRON SPUTTERING; TRANSPARENT CONDUCTING OXIDES; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

CO-DOPED ZNO; FLEXIBLE THIN FILMS; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL BAND GAP ENERGY; POLYCRYSTALLINE WURTZITE; RF MAGNETRON SPUTTERING TECHNIQUE; RF-MAGNETRON SPUTTERING; TRANSPARENT CONDUCTIVE THIN FILMS;

THIN FILMS;

EID: 85015924477     PISSN: 21870764     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jascer.2013.06.003     Document Type: Article

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