Annealing effects on Zn1-xMgxO/CIGS interfaces characterized by ultraviolet light excited time-resolved photoluminescence

Solar Energy Materials and Solar Cells

Volumn 92, Issue 9, 2008, Pages 1086-1090

  Shimakawa, Shin ichi ^a   Hashimoto, Yasuhiro ^a   Hayashi, Shigeo ^a   Satoh, Takuya ^a   Negami, Takayuki ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Buffer layer; Cu(In; Ga)Se2; Interface; Lifetime; Solar cell; Time resolved photoluminescence; Zn1 xMgxO

Indexed keywords

ANNEALING; PHOTOLUMINESCENCE; SOLAR CELLS; THERMAL EFFECTS;

ANNEALING TEMPERATURE; TIME-RESOLVED PHOTOLUMINESCENCE;

INTERFACES (MATERIALS);

EID: 45049086465     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.03.014     Document Type: Article

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