Metal-nitride-oxide-semiconductor light-emitting devices for general lighting

Optics Express

Volumn 19, Issue 103, 2011, Pages A234-A244

  Berencen Y ^a   Carreras, Josep ^b   Jambois, O ^a   Ramirez J M ^a   Ramirez J A ^c   Dominguez C ^d   Hunt, Charles E ^b,e   Garrido, B ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

^b CATALONIA INSTITUTE FOR ENERGY RESEARCH IREC   (Spain)

^c UNIVERSITY OF HAVANA   (Cuba)

^d INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^e UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85010093031     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.00A234     Document Type: Article

References (34)

1. S. Nakamura, M. Senoh, and T. Mukai, “Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers, ” Jpn. J. Appl. Phys. 30(Part 2, No. 10A), 1708-1711 (1991).
2. F. A. Ponce and D. P. Bour, “Nitride-based semiconductors for blue and green light-emitting devices, ” Nature 386(6623), 351-359 (1997).
3. S. Nakamura, M. Senoh, and T. Mukai, “High-power InGaN/GaN double-heterostructure violet light emitting diodes, ” Appl. Phys. Lett. 62(19), 2390-2393 (1993).
4. S. Nakamura, M. Senoh, N. Shin-ichi, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes, ” Appl. Phys. Lett. 69(26), 4056-059 (1996).
5. A. Zukauskas, M. S. Shur, and R. Gaska, Introduction to Solid State Lighting (John Wiley and Sons, New York, 2002).
6. E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart, ” Science 308(5726), 1274-1278 (2005).
7. Photonics 21 Strategic Research Agenda, http://www.photonics21.org/AboutPhotonics21/SRA.php.
8. Multi-Year Program Plan, Solid State Lighting Research and Development, US Department of Energy, http://apps1.eere.energy.gov/buildings/publications/pdfs/ssl/ssl_mypp2009_web.pdf.
9. Y.-L. Wang, F. Ren, H. S. Kim, D. P. Norton, and S. J. Pearton, F. Ren, D. P. Norton, and S. J. Pearton, “Materials and Process Development for ZnMgO/ZnO Light-Emitting Diodes, ” IEEE J. Quantum Electron. 14(4), 1048-1052 (2008).
10. W. I. Park and G.-C. Yi, “Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN, ” Adv. Mater. (Deerfield Beach Fla.) 16(1), 87-90 (2004).
11. L. T. Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers, ” Appl. Phys. Lett. 57(10), 1046-1048 (1990).
12. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, “Optical gain in silicon nanocrystals, ” Nature 408(6811), 440-444 (2000).
13. R. J. Walters, G. I. Bourianoff, and H. A. Atwater, “Field-effect electroluminescence in silicon nanocrystals, ” Nat. Mater. 4(2), 143-146 (2005).
14. T. P. Chen, Y. Liu, M. S. Tse, O. K. Tan, P. F. Ho, K. Y. Liu, D. Gui, and A. L. K. Tan, “Dielectric functions of Si nanocrystals embedded in a SiO2 matrix, ” Phys. Rev. B 68(15), 153301 (2003).
15. J. Bu and M. H. White, “Design considerations in scaled SONOS nonvolatile memory devices, ” Solid-State Electron. 45(1), 113-120 (2001).
16. M. Perálvarez, C. García, M. López, B. Garrido, J. Barreto, C. Domínguez, and J. A. Rodríguez, “Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition, ” Appl. Phys. Lett. 89(5), 51112-51115 (2006).
17. O. Jambois, Y. Berencen, K. Hijazi, M. Wojdak, A. J. Kenyon, F. Gourbilleau, R. Rizk, and B. Garrido, “Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions, ” J. Appl. Phys. 106(6), 63526-63532 (2009).
18. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
19. M. Perálvarez, J. Barreto, J. Carreras, A. Morales, D. Navarro-Urrios, Y. Lebour, C. Domínguez, and B. Garrido, “Si-nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical vapour deposition, ” Nanotechnology 20(40), 405201 (2009).
20. S. M. Sze, Physics of Semiconductor Devices 2nd ed. (Wiley, New York, 1981).
21. S. Habermehl, R. T. Apodaca, and R. J. Kaplar, “On dielectric breakdown in silicon-rich silicon nitride thin films, ” Appl. Phys. Lett. 94(1), 012905-12908 (2009).
22. W. Chandra and L. K. Ang, “Space charge limited current in a gap combined of free space and solid, ” Appl. Phys. Lett. 96(18), 183501 (2010).
23. J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures, ” Appl. Phys. Lett. 93(15), 151116 (2008).
24. R. Hattori and J. Shirafuji, “Longitudinal electron drift mobility of hydrogenated amorphous silicon/silicon nitride multilayer structures revelealed by time-of-flight measurements, ” Appl. Phys. Lett. 54(12), 1118-1120 (1989).
25. J. Robertson and M. J. Powell, “Gap states in silicon-nitride, ” Appl. Phys. Lett. 44(4), 415-417 (1984).
26. Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film, ” Opt. Express 18(19), 20439-20444 (2010).
27. L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, “Light emission from silicon-rich nitride nanostructures, ” Appl. Phys. Lett. 88(18), 183103 (2006).
28. K. A. Nasyrov, S. S. Shaimeev, and V. A. Gritsenko, “Trap-Assisted Tunneling Hole Injection in SiO2: Experiment and Theory, ” J. Exp. Theor. Phys. 109(5), 786-793 (2009).
29. M. Perálvarez and J. Josep Carreras, M. Perálvarez, J. Carreras, J. Barreto, A. Morales, C. Domínguez, and B. Garrido, “Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitrideoxide gate stacks, ” Appl. Phys. Lett. 92(24), 241104 (2008).
30. CIE, (1995), Method of Measuring and Specifying Colour Rendering Properties of Light Sources Publication 13.3, Vienna: Commission Internationale de l'Eclairage, ISBN 978-3900734572.
31. CIE, (1926), Commission internationale de l'Eclairage proceedings (Cambridge University Press, Cambridge) p. 1924.
32. W. Davis and Y. Ohno, “Color quality scale, ” Opt. Eng. 49(3), 33602 (2010).
33. J. Carreras, J. M. Quintero, and C. E. Hunt, “Theoretical limits of natural light emulation, ” Second CIE Expert Symposium on Appearance, Ghent, Belgium (2010).
34. J. Carreras, J. Quintero, and C. E. Hunt, “Towards the Definition of New Visual Color Quality Representations, ” Illuminating Engineering Society (IES) Meeting, Toronto, Canada, (2010).