Trap-assisted tunneling hole injection in SiO2: Experiment and theory

Journal of Experimental and Theoretical Physics

Volumn 109, Issue 5, 2009, Pages 786-793

  Nasyrov, K A ^a   Shaimeev, S S ^b   Gritsenko, V A ^b  

^a INSTITUTE OF AUTOMATION AND ELECTROMETRY   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; EXPERIMENTAL DATA; FOWLER-NORDHEIM LAW; HIGH ELECTRIC FIELDS; HOLE INJECTION; NARROW ENERGY BANDS; PHYSICAL PARAMETERS; TANTALUM NITRIDES; TRAP ASSISTED TUNNELING;

ELECTRIC FIELDS; ELECTRON INJECTION; HOLE TRAPS; SILICON NITRIDE; TANTALUM; TANTALUM OXIDES; WIND TUNNELS;

SILICON OXIDES;

EID: 77149121091     PISSN: 10637761     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063776109110089     Document Type: Article

References (28)

1. P. M. Schneider and W. B. Fowler, Phys. Rev. Lett. 36, 425 (1976).
2. J. R. Chelikowsky and M. Schluter, Phys. Rev. B: Solid State 15, 4020 (1977).
3. E. Gnani, S. Reggiani, R. Colle, and M. Rudan, IEEE Trans. Electron Devices 47, 1795 (2000).
4. E. K. Chang, M. Rohlfing, and S. G. Louie, Phys. Rev. Lett. 85, 2613 (2000).
5. I. A. Brytov, V. A. Gritsenko, and Yu. N. Romashchenko, Zh. Éksp. Teor. Fiz. 89 (2), 562 (1985)
6. [Sov. Phys. JETP 62 (2), 321 (1985)].
7. V. A. Gritsenko, R. M. Ivanov, and Yu. N. Morokov, Zh. Éksp. Teor. Fiz. 108 (6), 2216 (1995)
8. [JETP 81 (6), 1208 (1995)].
9. V. A. Gritsenko, Yu. N. Novikov, A. V. Shaposhnikov, and Yu. N. Morokov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 35 (9), 1041 (2001)
10. [Semiconductors 35 (9), 997 (2001)].
11. V. A. Gritsenko, Composition and Electronic Structure of Amorphous Dielectrics in the Silicon MIS Structures (Nauka, Novosibirsk, 1993) [in Russian].
12. N. F. Mott and E. A. Davis, Electron Processes in NonCrystalline Materials (Clarendon, Oxford, 1979), p. 432.
13. M. Lenzlinger and E. H. Snow, J. Appl. Phys. 40, 278 (1969).
14. Z. A. Weinberg, W. C. Johnson, and M. A. Lampert, J. Appl. Phys. 47, 248 (1976).
15. P. E. Blochl and J. H. Stathis, Phys. Rev. Lett. 83, 372 (1999).
16. W. K. Chim and P. S. Lim, J. Appl. Phys. 91, 1577 (2002).
17. C. Svensson and I. Lundström, J. Appl. Phys. 44, 4657 (1973).
18. E. Suzuki and D. K. Shroder, J. Appl. Phys. 60, 3616 (1986).
19. M. P. Houng, Y. H. Wang, and W. J. Chang, J. Appl. Phys. 86, 1488 (1999).
20. M. Houssa, M. Tuominen, M. Naili, V. Afanas'ev, A. Stesmans, S. Haukka, and M. M. Heyns, J. Appl. Phys. 87, 8615 (2000).
21. V. A. Gritsenko, in Silicon Nitride in Electronics, Ed. By V. I. Belyi (Elsevier, New York, 1988), p. 263.
22. http://www.photokina-show.com/0312/samsung//storage/flashmemorycard/
23. K. A. Nasyrov, S. S. Shaǐmeev, V. A. Gritsenko, J. H. Han, C. W. Kim, and J.-W. Lee, Zh. Éksp. Teor. Fiz. 129 (5), 926 (2006)
24. [JETP 102 (5), 810 (2006)].
25. A. M. Goodman, Phys. Rev. 152, 780 (1966).
26. Y. T. Hou, M. F. Li, Y. Jin, and W. H. Lai, J. Appl. Phys. 91, 258 (2002).
27. B. Brar, G. D. Wilk, and A. S. Seabaugh, Appl. Phys. Lett. 69, 2728 (1996).
28. C. Svensson and I. Lundström, J. Appl. Phys. 43, 5045 (1972).