Si-nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical vapour deposition

Nanotechnology

Volumn 20, Issue 40, 2009, Pages

  Peralvarez M ^a   Barreto, J ^b   Carreras, Josep ^a   Morales, A ^c   Navarro Urrios, D ^a   Lebour, Y ^a   Dominguez C ^b   Garrido, B ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATED AGEING; ACTIVE LAYER; CHEMICAL DEPOSITION; CHEMICAL VAPOUR DEPOSITION; CONTINUOUS EMISSION; CURRENT-VOLTAGE MEASUREMENTS; DEGRADATION RATE; DIRECT CURRENT; ELECTRICAL PROPERTY; EMISSION DECREASE; EMISSION INTENSITY; EMISSION POWER; FIELD-EFFECT; FREE REGION; HIGH CURRENTS; IN-DEPTH STUDY; POWER CONSUMPTION; POWER EFFICIENCY; PULSED EXCITATION; SI NANOCRYSTAL; TRANSMISSION ELECTRON MICROSCOPY IMAGES; TUNNELLING CURRENT;

ELECTRIC PROPERTIES; FABRICATION; IMPACT IONIZATION; ION BOMBARDMENT; ION IMPLANTATION; LUMINESCENCE; NANOCRYSTALS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SILICON; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

DEGRADATION;

METAL OXIDE; NANOCRYSTAL; SILICON; SILICON DIOXIDE; NANOPARTICLE;

ARTICLE; CONTROLLED STUDY; DEGRADATION KINETICS; FIELD EMISSION; ION IMPLANTATION; ION TRANSPORT; LIGHT EMITTING DIODE; LUMINESCENCE; MATHEMATICAL COMPUTING; MOLECULAR MODEL; NANOFABRICATION; NONHUMAN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRIORITY JOURNAL; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY; CHEMISTRY; ELECTROCHEMISTRY; ILLUMINATION; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY;

ELECTROCHEMISTRY; LIGHTING; NANOPARTICLES; NANOTECHNOLOGY; SILICON DIOXIDE;

EID: 70349680932     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/40/405201     Document Type: Article

References (24)

1. Carreras J, Arbiol J, Garrido B, Bonafos C and Montserrat J 2008 Direct modulation of electroluminescence from silicon nanocrystals beyond radiative recombination rates Appl. Phys. Lett. 92 091103
2. Jaiswal S L, Simpson J T, Withrow S P, White C W and Norris P M 2003 Design of a nanoscale silicon laser Appl. Phys. A 77 57-61
3. Jalali B and Fathpour S 2006 Silicon photonics J. Lightwave Technol. 24 4600-15 (Pubitemid 46357231)
4. Redding B, Creazzo T, Marchena E, Shouyuan S and Prather D W 2008 Design, fabrication, and characterization of a 1D microcavity for enhanced luminescence from silicon nanocrystals GFP: 5th IEEE Int. Conf. on Group IV Photonics 2008 pp329-31
5. Rong H S, Jones R, Liu A S, Cohen O, Hak D, Fang A and Paniccia M 2005 A continuous-wave Raman silicon laser Nature 433 725-8
6. De la Torre J et al 2003 Optical properties of silicon nanocrystal LEDs Physica E 16 326-30
7. DiMaria D J, Kirtley J R, Pakulis E J, Dong D W, Kuan T S, Pesavento F L, Theis T N, Cutro J A and Brorson S D 1984 Electroluminescence studies in silicon dioxide films containing tiny silicon islands J. Appl. Phys. 56 401-16
8. Irrera A et al 2005 Correlation between electroluminescence and structural properties of Si nanoclusters Opt. Mater. 27 1031-40
9. 2 films Appl. Phys. Lett. 77 2952-4
10. Peralvarez M, Garcia C, Lopez M, Garrido B, Barreto J, Dominguez C and Rodriguez J A 2006 Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition Appl. Phys. Lett. 89 3
11. Walters R J, Bourianoff G I and Atwater H A 2005 Field-effect electroluminescence in silicon nanocrystals Nat. Mater. 4 143-6
12. Ziegler J F 2004 SRIM-2003 Nucl. Instrum. Methods Phys. Res. B 219 1027-36
13. x films studied by Raman scattering J. Appl. Phys. 104 044304
14. 2 J. Appl. Phys. 91 798-807
15. Belyakov V A, Burdov V A, Lockwood R and Meldrum A 2008 Silicon nanocrystals: fundamental theory and implications for stimulated emission Adv. Opt. Technol. 2008 279502
16. 2 J. Appl. Phys. 86 6128-34
17. 2 Appl. Phys. Lett. 82 1595-7
18. Garrido B, Cheylan S, Gonzalez-Varona O, Perez-Rodriguez A and Morante J R 2003 The effect of additional oxidation on the memory characteristics of metal-oxide-semiconductor capacitors with Si nanocrystals Appl. Phys. Lett. 82 4818-20
19. Irrera A, Pacifici D, Miritello M, Franzo G, Priolo F, Iacona F, Sanfilippo D, Di Stefano G and Fallica P G 2002 Excitation and de-excitation properties of silicon quantum dots under electrical pumping Appl. Phys. Lett. 81 1866-8
20. Carreras J and Garrido B 2008 Modeling direct modulation dynamics in silicon nanocrystal light emitting transistors 5th IEEE Int. Conf. on Group IV Photonics 2008 pp326-8
21. Valenta J, Lalic N and Linnros J 2004 Electroluminescence of single silicon nanocrystals Appl. Phys. Lett. 84 1459-61
22. Walters R J, Carreras J, Feng T, Bell L D and Atwater H A 2006 Silicon nanocrystal field-effect light-emitting devices IEEE J. Sel. Top. Quantum Electron. 12 1647-56
23. Peralvarez M, Carreras J, Barreto J, Morales A, Dominguez C and Garrido B 2008 Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks Appl. Phys. Lett. 92 241104
24. Cui Z, Liou J J and Yue Y 2003 A new extrapolation method for long-term degradation prediction of deep-submicron MOSFETs IEEE Trans. Electron Devices 50 1398-401