메뉴 건너뛰기




Volumn 11, Issue 5, 2005, Pages 990-998

Long-Wavelength Vertical-Cavity Surface-Emitting Lasers on InP With Lattice Matched AlGaInAs—InP DBR Grown by MOCVD

Author keywords

InP; long wavelength; metal organic chemical vapor deposition (MOCVD); surface emitting lasers

Indexed keywords


EID: 85008052478     PISSN: 1077260X     EISSN: 15584542     Source Type: Journal    
DOI: 10.1109/JSTQE.2005.853841     Document Type: Article
Times cited : (129)

References (34)
  • 1
    • 0034313134 scopus 로고    scopus 로고
    • Surface-emitting laser—Its birth and generation of new optoelectronics field
    • Nov./Dec.
    • K. Iga, “Surface-emitting laser—Its birth and generation of new optoelectronics field,” J. Sel. Topics Quantum Electron, vol. 6, no. 6, pp. 1201–1215, Nov./Dec. 2000.
    • (2000) J. Sel. Topics Quantum Electron , vol.6 , Issue.6 , pp. 1201-1215
    • Iga, K.1
  • 2
    • 0030656827 scopus 로고    scopus 로고
    • Tera bytes optical disk with electric tracking control using micro-cavity VCSEL array and PD array
    • K. Goto, “Tera bytes optical disk with electric tracking control using micro-cavity VCSEL array and PD array,” in Dig. LEOS-Summer Topical Meeting, vol. MC-4, 1997, pp. 21–22.
    • (1997) Dig. LEOS-Summer Topical Meeting , vol.MC-4 , pp. 21-22
    • Goto, K.1
  • 3
    • 1942507496 scopus 로고    scopus 로고
    • Light-induced transverse-mode switching of a vertical-cavity surface-emitting laser for optical signal processing
    • Y. Onishi, N. Nishiyama, C. Caneau, F. Koyama, and C. E. Zah, “Light-induced transverse-mode switching of a vertical-cavity surface-emitting laser for optical signal processing,” Jpn. J. Appl. Phys., vol. 43, no. 2A, pp.L187–L189, 2004.
    • (2004) Jpn. J. Appl. Phys. , vol.43 , Issue.2A , pp. L187-L189
    • Onishi, Y.1    Nishiyama, N.2    Caneau, C.3    Koyama, F.4    Zah, C.E.5
  • 5
    • 85008010987 scopus 로고    scopus 로고
    • Personal projection, or how to put a large screen in a small device
    • V. M. Bove Jr. and W. Sierra, “Personal projection, or how to put a large screen in a small device,” in Dig. SID’03, 2003, p. 125.
    • (2003) Dig. SID’03 , pp. 125
    • Bove, V.M.1    Sierra, W.2
  • 6
    • 84970082436 scopus 로고
    • GalnAsP/InP surface emitting injection lasers
    • H. Soda, K. Iga, C. Kitahara, and Y. Suematsu, “GalnAsP/InP surface emitting injection lasers,” Jpn. J. Appl. Phys., vol. 18, no. 12, pp. 2329–2330, 1979.
    • (1979) Jpn. J. Appl. Phys. , vol.18 , Issue.12 , pp. 2329-2330
    • Soda, H.1    Iga, K.2    Kitahara, C.3    Suematsu, Y.4
  • 7
    • 0000576718 scopus 로고
    • Room temperature cw operation of GaAs vertical cavity surface emitting laser
    • F. Koyama, S. Kinoshita, and K. Iga, “Room temperature cw operation of GaAs vertical cavity surface emitting laser,” Trans. IEICE, vol. E71, no. 11, pp. 1089–1090, 1988.
    • (1988) Trans. IEICE , vol.E71 , Issue.11 , pp. 1089-1090
    • Koyama, F.1    Kinoshita, S.2    Iga, K.3
  • 9
    • 0028764159 scopus 로고
    • Native oxide defined ring contact for low threshold vertical cavity lasers
    • D. L. Huffaker, D. G. Deppe, K. Kumar, and T. J. Rogers, “Native oxide defined ring contact for low threshold vertical cavity lasers,” Appl. Phys. Lett., vol. 65, pp. 97–99, 1994.
    • (1994) Appl. Phys. Lett. , vol.65 , pp. 97-99
    • Huffaker, D.L.1    Deppe, D.G.2    Kumar, K.3    Rogers, T.J.4
  • 10
  • 11
    • 0033871367 scopus 로고    scopus 로고
    • Room temperature low threshold CW operation of 1.23 μm GaAsSb VCSELs of GaAs substrates
    • M. Yamada, T. Anan, K. Kurihara, K. Nishi, K. Tokutome, A. Kamei, and S. Sugou, “Room temperature low threshold CW operation of 1.23 μm GaAsSb VCSELs of GaAs substrates,” Electron. Lett., vol. 36, no. 7, pp.637–638, 2000.
    • (2000) Electron. Lett. , vol.36 , Issue.7 , pp. 637-638
    • Yamada, M.1    Anan, T.2    Kurihara, K.3    Nishi, K.4    Tokutome, K.5    Kamei, A.6    Sugou, S.7
  • 13
    • 0031381987 scopus 로고    scopus 로고
    • Oxide-confined VCSELs with quantum well quantum dot active region
    • D. G. Deppe, D. L. Huffaker, Q. Deng, T.-H. Oh, and L. A. Graham, “Oxide-confined VCSELs with quantum well quantum dot active region,” in Proc. IEEE/LEOS’97, vol. ThA 1, 1997, pp. 287–288.
    • (1997) Proc. IEEE/LEOS’97 , vol.ThA 1 , pp. 287-288
    • Deppe, D.G.1    Huffaker, D.L.2    Deng, Q.3    Oh, T.-H.4    Graham, L.A.5
  • 14
    • 0030079777 scopus 로고    scopus 로고
    • GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance
    • M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, “GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance,” Jpn. J. Appl. Phys, vol. 35, pp. 1273–1275, 1996.
    • (1996) Jpn. J. Appl. Phys , vol.35 , pp. 1273-1275
    • Kondow, M.1    Uomi, K.2    Niwa, A.3    Kitatani, T.4    Watahiki, S.5    Yazawa, Y.6
  • 16
    • 1342282433 scopus 로고    scopus 로고
    • High-performance 1200-nm InGaAs and 1300 nm InGaAsN quantum-well lasers by metalorganic chemical vapor deposition
    • Sep./Oct.
    • N. Tansu, J. Y. Yeh, and L. H. Mawst, “High-performance 1200-nm InGaAs and 1300 nm InGaAsN quantum-well lasers by metalorganic chemical vapor deposition,” J. Sel. Topics Quantum Electron, vol. 9, no. 5, pp. 1220–1227, Sep./Oct. 2003.
    • (2003) J. Sel. Topics Quantum Electron , vol.9 , Issue.5 , pp. 1220-1227
    • Tansu, N.1    Yeh, J.Y.2    Mawst, L.H.3
  • 17
  • 23
    • 0037422134 scopus 로고    scopus 로고
    • High efficiency long wavelength vertical cavity surface emitting laser on InP grown by MOCVD
    • N. Nishiyama, C. Caneau, G. Guryanov, X. S. Liu, M. Hu, and C. E. Zah, “High efficiency long wavelength vertical cavity surface emitting laser on InP grown by MOCVD,” Electron. Lett., vol. 39, no. 5, pp. 437–438, 2003.
    • (2003) Electron. Lett. , vol.39 , Issue.5 , pp. 437-438
    • Nishiyama, N.1    Caneau, C.2    Guryanov, G.3    Liu, X.S.4    Hu, M.5    Zah, C.E.6
  • 25
    • 3543057540 scopus 로고    scopus 로고
    • Long-wavelength InP-based VCSELs with Buried tunnel junction: Properties and applications
    • R. Shau, M. Ortsiefer, J. Rosskopf, G. Bohm, C. Lauer, M. Maute, and M. -C. Amann, “Long-wavelength InP-based VCSELs with Buried tunnel junction: Properties and applications,” Proc. SPIE, vol. 5364, pp. 1–15, 2004.
    • (2004) Proc. SPIE , vol.5364 , pp. 1-15
    • Shau, R.1    Ortsiefer, M.2    Rosskopf, J.3    Bohm, G.4    Lauer, C.5    Maute, M.6    Amann, M.-C.7
  • 28
    • 0031358735 scopus 로고    scopus 로고
    • Lateral electron current operation of vertical cavity surface emitting lasers with buried tunnel contact hole sources
    • J. J. Wierer, P. W. Evans, N. Holonyak, Jr., and D. A. Kellogg, “Lateral electron current operation of vertical cavity surface emitting lasers with buried tunnel contact hole sources,” Appl. Phys. Lett., vol. 71, no. 24, pp.3468-3470, 1997.
    • (1997) Appl. Phys. Lett. , vol.71 , Issue.24 , pp. 3468-3470
    • Wierer, J.J.1    Evans, P.W.2    Holonyak, N.3    Kellogg, D.A.4
  • 32
    • 1642473185 scopus 로고    scopus 로고
    • Long wavelength VCSELs on InP grown by MOCVD
    • N. Nishiyama, C. Caneau, and C. E. Zah, “Long wavelength VCSELs on InP grown by MOCVD,” Proc. SPIE, vol. 5246, pp. 10–17, 2003.
    • (2003) Proc. SPIE , vol.5246 , pp. 10-17
    • Nishiyama, N.1    Caneau, C.2    Zah, C.E.3
  • 33
    • 85008010971 scopus 로고    scopus 로고
    • Active and passive optical components for WDM communication III. [Online]. Available:
    • Active and passive optical components for WDM communication III. [Online]. Available: http://www.coming.com/opticalfiber/.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.