Oxide-confined VCSELs with quantum well and quantum dot active regions

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 1997, Pages 287-288

  Deppe, D G ^a   Huffaker, D L ^a   Deng, Q ^a   Oh, T H ^a   Graham, L A ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; FERMI LEVEL; LASER MODES; PARTICLE BEAM INJECTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

TUNNEL INJECTION; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031381987     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)