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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 19, Issue 4, 2001, Pages 1730-1736

Process window extension of TiN diffusion barrier using preoxidation of Ru and [formula omitted] film for [formula omitted] dielectric film

(3) Yoon, Dong Soo a Hong, Kwon a Roh, Jae Sung a

a Hynix Semiconductor Inc (South Korea)

Author keywords

(Ba,Sr)TiO3; RuO2; TiN

Indexed keywords

EID: 85007640944 PISSN: 07342101 EISSN: 15208559 Source Type: Journal
DOI: 10.1116/1.1359544 Document Type: Conference Paper

Times cited : (12)

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