Effect of CeO2 addition on the performance of a Ta barrier for high-density memory device applications

Journal of the Electrochemical Society

Volumn 147, Issue 7, 2000, Pages 2671-2678

  Yoon, Dong Soo ^a   Sung Man, Lee ^b   Baik, Hong Koo ^a  

^a Yonsei University   (South Korea)

^b Kangwon National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CERIUM COMPOUNDS; CONDUCTIVE FILMS; CRYSTAL MICROSTRUCTURE; DIFFUSION IN SOLIDS; ELECTROCHEMICAL ELECTRODES; GRAIN BOUNDARIES; OXIDATION RESISTANCE; PLATINUM COMPOUNDS; POLYCRYSTALLINE MATERIALS; TANTALUM; TANTALUM COMPOUNDS;

DIFFUSION BARRIER FILMS; TANTALUM PENTOXIDE;

METALLIC FILMS;

EID: 0342472125     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393588     Document Type: Article

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