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Volumn 58, Issue 5, 2011, Pages 1369-1373

Epitaxial growth of GaN films on atomically stepped (0001) lithium-niobate (LiNbO3) substrates

Author keywords

GaN; Lithium niobate (LiNbO3); Molecular beam epitaxy (MBE); Stepped surface

Indexed keywords


EID: 84987875648     PISSN: 03744884     EISSN: 19768524     Source Type: Journal    
DOI: 10.3938/jkps.58.1369     Document Type: Article
Times cited : (1)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.