Structural and morphological studies of GaN thin films grown on different oriented LiNbO3 substrates by MOVPE

EPJ Applied Physics

Volumn 43, Issue 3, 2008, Pages 295-299

  Moudakir, T ^a   Orsal, G ^a   Maloufi, N ^b   Sirenko, A ^c   Gautier, S ^a   Bouchaour, M ^a   Ould Saad, S ^a   Salvestrini, P ^a   Ougazzaden, A ^d  

^a SUPELEC   (France)

^b UNIVERSITÉ PAUL VERLAINE METZ   (France)

^c NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DIFFRACTION; EPILAYERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; LITHIUM; METALLORGANIC VAPOR PHASE EPITAXY; MICROSCOPES; MOLECULAR BEAM EPITAXY; NIOBIUM COMPOUNDS; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; THICK FILMS; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

EX-SITU; GAN LAYERS; METAL-ORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPES;

SUBSTRATES;

EID: 50849107398     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap:2008144     Document Type: Conference Paper

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