In-Depth Analysis of NBTI at 2X nm Node DRAM

2016 IEEE 8th International Memory Workshop, IMW 2016

Volumn , Issue , 2016, Pages

  Han, Seunguk ^a   Lee, Sungsam ^a   Baek, Sungkweon ^a   Jang, Sungho ^a   Jeong, Wonchang ^a   Huh, Kijae ^a   Jeong, Moonyoung ^a   Lim, Junhee ^a   Yamada, Satoru ^a   Hong, Hyeongsun ^a   Lee, Kyupil ^a   Jin, Gyoyoung ^a   Jung, Eunseung ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Deuterium; DRAM; Interface trap; Negative bias temperature instability; Refresh time; Reliability of MOSFET; SiGe channel

Indexed keywords

DEUTERIUM; MOSFET DEVICES; SILICON; SILICON ALLOYS; STATIC RANDOM ACCESS STORAGE; THERMODYNAMIC STABILITY;

INTERFACE TRAPS; MOS-FET; NEGATIVE BIAS TEMPERATURE INSTABILITY; REFRESH TIME; SIGE CHANNELS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 84984650451     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2016.7495279     Document Type: Conference Paper

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