Role of hydrogen anneal in thin gate oxide for multi-metal-layer CMOS process

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 186-190

  Lee, Y H ^a   Nachman, R ^a   Seshan, K ^a   Kau, D C ^a   Mielke, N ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CMOS INTEGRATED CIRCUITS; HOT CARRIERS; HYDROGEN; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUIT TESTING; MATHEMATICAL MODELS; METALLIZING; MULTILAYERS; TITANIUM;

GATE OXIDE STRESSING; MULTIMETAL-LAYER CMOS PROCESS;

MOSFET DEVICES;

EID: 0033749864     PISSN: 00999512     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2000.843912     Document Type: Article

References (18)

1. M. Ichimura Diffusivity and solubility of hydrogen in grain-refined aluminum Material Transactions 34 5 404 409 1993
2. D. Fink Hydrogen implantation and diffusion in silicon and silicon dioxide App. Phys. A 61 381 388
3. T. Mihoshi Diffusion of hydrogen in titanium, Ti8sAl12 and Ti3Al J. Chem. Soc. Faraday Trans. 92 3 483 486 1996
4. Y. Takahashi Measurement of diffusion coefficients of water in electron cyclotron resonance plasma Si02 Jpn. J. Appl. Phys. 32 431 433 1993
5. J. Robertson Defects and hydrogen in amorphous silicon nitride Philosophical magazine B 69 2 307 326 1994
6. W. Arnoldbik Diffusion of hydrogen in low-pressure chemical vapor-depodited silicon nitride films Appl. Phys. Lett. 56 25 2530 2532 1990
7. W. Arnoldbik Dynamic behavior of hydrogen in silicon nitride and oxynitride films made by low-pressure chemical vapor deposition Physical Review B. 48 8 5444 5456 1993
8. B. Tong A study of hydrogen diffusion in crystalline silicon by secondary-ion mass spectrometry Can. J. Phys. 67 379 383 1989
9. L. Don J. H. Stathis J. A. Tornello Moderatetemperature anneal of 7 nm thermal SiO2 in O2-and H2O-ffee atmosphere: effects on Si-SiO2 interface-trap distribution J. of Appl. Phys. 70 3 1510 1516 1991
10. N. S. Saks R. B. Klein D. L. Griscom Formation of interface traps in MOSFETs during annealing following low temperature irradiation IEEE Trans. Nucl. Science NS-35 1988
11. T. Zundel J. Weber Trap-limited hydrogen diffusion in boron-doped silicon Physical Review B 46 4 2071 2077 1992
12. G. Rosa NBTI-channel hot carrier effets in pMOSFETs in advanced CMOS technologies IEEE/IRPS 282 286 IEEE/IRPS 1997
13. H. Tuinhout Effects of metal coverage on MOSFET matching IEDM Tech Dig. 735 738 IEDM Tech Dig. 1996
14. A. D. Marwick J. C. Liu K. P. Rodbell Hydrogen redistribution and gettering in AcCu/Ti thin films J. of Appl. Phys. 69 11 7921 7923 1991
15. S.-T. Chang K. Y. Chiu Reduced oxide charge trapping and improved hot-electron reliability in submicrometer MOS device fabricated by titanium salicide process IEEE Electron Device Letters 9 5 244 246 1988
16. A. J. Lelis Trans. on Nuclear Science 36 6 1989
17. M Walters A. Reisman C.K. Williams A model for the structure and generation of neutral electron traps in irradiated SiO2 SEMATECH workshop on radiation damage 183 191 SEMATECH workshop on radiation damage 1990
18. J. D. Bude B. E. Weir P. J. Silverman Explanation of stress-induced damage in thin oxides IEDM Tech Dig. 179 182 IEDM Tech Dig. 1998