Improvement of data retention time property by reducing vacancy-type defect in dram cell transistor

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 695-696

  Okonogi, Kensuke ^a   Ohyu, Kiyonori ^a   Umeda, Takahide ^b   Miyake, Hideharu ^a   Fujieda, Shinji ^c  

^a Elpida Memory Inc   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34250753816     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251329     Document Type: Conference Paper

References (5)

1. K.Okonogi, et al., IEDM Tech.Dig., p65-68 (2004)
2. T.Umeda et al., J.Appl.Phys., Vol. 94, No.11, p7105-7111 (2003)
3. Y.Mori, et al., IEEE IRPS Proc., p7-11 (2001)
4. H.Shirai et al., Appl. Phys. Lett., Vol. 54, p1748-1750 (1989)
5. K.Ohyu, et al., Jpn. J.Appl.Phys., Vol. 29, p457- (1990)