Running-in process of Si-SiOx/SiO2 pair at nanoscale—Sharp drops in friction and wear rate during initial cycles

Friction

Volumn 1, Issue 1, 2013, Pages 81-91

  Chen, Lei ^a   Kim, Seong H ^b   Wang, Xiaodong ^a   Qian, Linmao ^a  

^a SOUTHWEST JIAOTONG UNIVERSITY   (China)

^b The Pennsylvania State University   (United States)

Author keywords

atomic force microscope; friction; nanotribology; nanowear; running in process; silicon

Indexed keywords

ATOMIC FORCE MICROSCOPY; DROPS; ELECTROMECHANICAL DEVICES; FRICTION; MEMS; NANOTECHNOLOGY; NANOTRIBOLOGY; SILICA; SILICON; SILICON OXIDES; WEAR OF MATERIALS;

DISPLACEMENT AMPLITUDES; INTERFACIAL FORCES; MICRO ELECTROMECHANICAL SYSTEM (MEMS); NANO WEAR; NATIVE OXIDE LAYER; PHENOMENOLOGICAL MODELING; RUNNING-IN PROCESS; SINGLE CRYSTALLINE SILICON;

SILICON WAFERS;

EID: 84976286693     PISSN: 22237690     EISSN: 22237704     Source Type: Journal    
DOI: 10.1007/s40544-013-0007-1     Document Type: Article

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