Large electron concentration modulation using capacitance enhancement in SrTiO3/SmTiO3 Fin-field effect transistors

Applied Physics Letters

Volumn 108, Issue 18, 2016, Pages

  Verma, Amit ^a,b   Nomoto, Kazuki ^a,b   Hwang, Wan Sik ^a,c   Raghavan, Santosh ^d   Stemmer, Susanne ^d   Jena, Debdeep ^a,b  

^a University of Notre Dame   (United States)

^b Cornell University   (United States)

^c Hankuk Aviation University   (South Korea)

^d University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRON GAS; ELECTRONS; FINS (HEAT EXCHANGE); INTERFACE STATES; MODULATION; MOLECULAR BEAM EPITAXY; SAMARIUM COMPOUNDS; STRONTIUM TITANATES; TITANIUM COMPOUNDS;

CAPACITANCE ENHANCEMENT; COMPLEX OXIDES; ELECTRON CONCENTRATION; FIN FIELD EFFECT TRANSISTORS; GATE CAPACITANCE; GEOMETRICAL CAPACITANCE; HETERO-INTERFACES; INTERFACE UNITS;

FINFET;

EID: 84973650113     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4948770     Document Type: Article

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