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Volumn 99, Issue 23, 2011, Pages

Electrostatic carrier doping of GdTiO 3/SrTiO 3 interfaces

(10) Moetakef, Pouya a Cain, Tyler A a Ouellette, Daniel G b Zhang, Jack Y a Klenov, Dmitri O c Janotti, Anderson a Van De Walle, Chris G a Rajan, Siddharth d Allen, S James b Stemmer, Susanne a

a University of California (United States)

b UNIVERSITY OF CALIFORNIA (United States)

c Thermo Fisher Scientific (United States)

d Ohio State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; BAND INSULATORS; ELECTROSTATIC BOUNDARY CONDITIONS; ELECTROSTATIC CARRIER DOPING; FIXED CHARGES; GROWTH SEQUENCES; HIGH CONCENTRATION; INTRINSIC ELECTRONICS; MOBILE CARRIERS; MOTT INSULATORS; POLAR INTERFACE; SHEET CARRIER DENSITIES; SRTIO; SURFACE UNITS; UNIT CELLS;

ELECTROSTATICS; MOLECULAR BEAM EPITAXY; STRONTIUM ALLOYS; STRONTIUM TITANATES; TWO DIMENSIONAL ELECTRON GAS;

CARRIER CONCENTRATION;

EID: 83455164195 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3669402 Document Type: Article

Times cited : (257)

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