Evolution of oxide disruptions: The (W)hole story about poly-Si/c-Si passivating contacts

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2016-November, Issue , 2016, Pages 221-224

  Tetzlaff, Dominic ^a   Krugener, Jan ^a   Larionova, Yevgeniya ^b   Reiter, Sina ^b   Turcu, Mircea ^b   Peibst, Robby ^a,b   Hohne, Uwe ^c   Kahler, Jan Dirk ^c   Wietler, Tobias ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^c Centrotherm Photovoltaics   (Germany)

Author keywords

junction formation; passivating contacts; pinholes; polysilicon; silicon; silicon oxide

Indexed keywords

PASSIVATION; POLYCRYSTALLINE MATERIALS; POLYSILICON; SILICON; SILICON OXIDES;

ANNEALING TEMPERATURES; CURRENT TRANSPORT; FORMATION AND EVOLUTIONS; JUNCTION FORMATION; PIN-HOLE MODELS; PINHOLES; POLYCRYSTALLINE-SI; THIN OXIDES;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 85003571528     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2016.7749582     Document Type: Conference Paper

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